Inverse doping profile analysis for semiconductor quality control

Loading...
Thumbnail Image
Authors
Myers, Joseph Kenneth
Issue Date
2009-12
Type
Dissertation
Language
en_US
Keywords
Research Projects
Organizational Units
Journal Issue
Alternative Title
Abstract

Inverse doping pro le problems are linked to inverse conductivity problems under the assumptions of zero space charge and low injection. Unipolar inverse conductivity problems are analyzed theoretically via three uniqueness proofs, the rst of which has been published as a paper in Inverse Problems [34]. Also, optimized numerical methods are developed for solving the unipolar direct conductivity problem with a piecewise constant conductivity coe cient. Finally, the unipolar inverse conductivity problem is solved for inclusions de ned by as many as 9 parameters, or by as many as 120 parameters when an initial guess for each parameter is known with less than 10% error. Our free boundary identi cation algorithm produces a sequence of improved approximations in a way that provides both regularization and accelerated convergence towards the solution.

Description
Thesis (Ph.D.)--Wichita State University, College of Liberal Arts and Sciences, Dept. of Mathematics and Statistics
Citation
Publisher
Wichita State University
License
Journal
Volume
Issue
PubMed ID
DOI
ISSN
EISSN