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Chalcogen doping effect on the insulator-to-metal transition in GdPS
Acharya, Gokul Basnet, Rabindra Chhetri, Santosh Karki Upreti, Dinesh Sharma, M.M. Wang, Jian Graf, David Hu, Jin
Acharya, Gokul
Basnet, Rabindra
Chhetri, Santosh Karki
Upreti, Dinesh
Sharma, M.M.
Wang, Jian
Graf, David
Hu, Jin
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2026-03-17
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GdPS; Insulator-to-Metal transition; Magnetic anisotropy; Magnetotransport anisotropy
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Acharya, Gokul & Basnet, Rabindra & Karki Chhetri, Santosh & Upreti, Dinesh & Sharma, Manish & Wang, Jian & Graf, D. & Hu, Jin. (2026). Chalcogen Doping Effect on the Insulator-to-Metal Transition in GdPS. Journal of Alloys and Compounds. 1061. 187404. 10.1016/j.jallcom.2026.187404.
Abstract
Topological semimetals offer a rich platform for exploring massless fermion physics and realizing exotic properties with potential technological applications. GdPS, a magnetic semiconductor derived from the nodal-line semimetal ZrSiS family, exhibits a field-induced insulator-to-metal transition driven by exchange splitting. This transition is accompanied by an unusual, isotropic, and gigantic negative magnetoresistance, attributed to negligible magnetic anisotropy resulting from the weak spin-orbit coupling of half-filled Gd³ ⁺ 4 f orbitals and light S atoms. In this work, we investigate Se substitution, which is expected to enhance spin-orbit coupling. Indeed, we observe slightly increased magnetic anisotropy in magnetotransport. Moreover, Se substitution suppresses the field-induced insulator-to-metal transition, likely due to an enlarged band gap that demands a higher exchange splitting to close. These findings provide deeper insights into the interplay between spin-orbit coupling, magnetic anisotropy, and transport behavior in GdPS, offering guidance for future materials design for desired functionalities. © 2026 The Authors
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This is an open access article under the CC BY license.
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Elsevier Ltd
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Journal of Alloys and Compounds
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09258388