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Insulator-to-Metal transition and isotropic gigantic magnetoresistance in layered magnetic semiconductors
Acharya, Gokul Neupane, Bimal Hsu, Chia-Hsu Yang, Xian P. Graf, David Choi, Eun Sang Pandey, Krishna Nabi, Md Rafique Un Chhetri, Santosh K. Basnet, Rabindra
Acharya, Gokul
Neupane, Bimal
Hsu, Chia-Hsu
Yang, Xian P.
Graf, David
Choi, Eun Sang
Pandey, Krishna
Nabi, Md Rafique Un
Chhetri, Santosh K.
Basnet, Rabindra
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Acharya_etAl.pdf
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2024-10-11
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Article
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Keywords
Exchange splitting,Insulator-to-metal transition,Isotropic magneto-transport,Magnetoresistance
Subjects (LCSH)
Citation
G. Acharya, B. Neupane, C.-H. Hsu, X. P. Yang, D. Graf, E. S. Choi, K. Pandey, M. R. U. Nabi, S. K. Chhetri, R. Basnet, S. Rahman, J. Wang, Z. Hu, B. Da, H. O. H. Churchill, G. Chang, M. Z. Hasan, Y. Wang, J. Hu, Insulator-to-Metal Transition and Isotropic Gigantic Magnetoresistance in Layered Magnetic Semiconductors. Adv. Mater. 2024, 2410655. https://doi.org/10.1002/adma.202410655
Abstract
Magnetotransport, the response of electrical conduction to external magnetic field, acts as an important tool to reveal fundamental concepts behind exotic phenomena and plays a key role in enabling spintronic applications. Magnetotransport is generally sensitive to magnetic field orientations. In contrast, efficient and isotropic modulation of electronic transport, which is useful in technology applications such as omnidirectional sensing, is rarely seen, especially for pristine crystals. Here a strategy is proposed to realize extremely strong modulation of electron conduction by magnetic field which is independent of field direction. GdPS, a layered antiferromagnetic semiconductor with resistivity anisotropies, supports a field-driven insulator-to-metal transition with a paradoxically isotropic gigantic negative magnetoresistance insensitive to magnetic field orientations. This isotropic magnetoresistance originates from the combined effects of a near-zero spin–orbit coupling of Gd3+-based half-filling f-electron system and the strong on-site f–d exchange coupling in Gd atoms. These results not only provide a novel material system with extraordinary magnetotransport that offers a missing block for antiferromagnet-based ultrafast and efficient spintronic devices, but also demonstrate the key ingredients for designing magnetic materials with desired transport properties for advanced functionalities. © 2024 The Author(s). Advanced Materials published by Wiley-VCH GmbH.
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This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
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Advanced Materials
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0935-9648