Planar stress relaxation in solid phase epitaxial CaF2 films grown on (111)Si by in situ rapid isothermal processing
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Authors
Singh R.
Kumar, A.
Thakur, R.P.S.
Chou, P.
Chaudhuri, J.
Gondhalekar, V.
Narayan, J.
Advisors
Issue Date
1990-04-16
Type
Article
Keywords
Planar stress relaxation , Planar stress , Isothermal processing
Citation
R. Singh, A. Kumar, R. P. S. Thakur, P. Chou, J. Chaudhuri, V. Gondhalekar, J. Narayan; Planar stress relaxation in solid phase epitaxial CaF2 films grown on (111)Si by in situ rapid isothermal processing. Appl. Phys. Lett. 16 April 1990; 56 (16): 1567–1569. https://doi.org/10.1063/1.103215
Abstract
Planar strain in CaF2 films on (111) Si substrate has been measured by an x-ray double-crystal diffraction technique using rocking curves. The films grown by a solid phase epitaxial approach using in situ rapid isothermal processing are almost free of tensile planar strain, and free from defects as observed by the transmission electron microscope diffraction pattern.
Table of Contents
Description
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Publisher
American Institute of Physics
Journal
Applied Physics Letters
Book Title
Series
PubMed ID
DOI
ISSN
00036951