Low-temperature heat capacities of silicon carbide

No Thumbnail Available
Authors
Lin, G. J.
Ho, J. C.
Dandekar, D. P.
Advisors
Issue Date
1987-01-01
Type
Article
Keywords
Research Projects
Organizational Units
Journal Issue
Citation
Lin, G. J.; Ho, J. C.; Dandekar, D. P.; , "Low-temperature heat capacities of silicon carbide," Journal of Applied Physics , vol.61, no.11, pp.5198, Jun 1987 doi: 10.1063/1.338302
Abstract

Temperature dependence of heat capacity data between 4 and 12 K can be represented by a single term, ßT3, associated with lattice vibrations. The coefficient ß corresponds to a large Debye temperature of 990 K consistent with the high melting point and hardness of this refractory ceramic material.

Table of Contents
Description
The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954
Publisher
IEEE
Journal
Book Title
Series
Journal of Applied Physics , vol.61, no.11, pp.5198
PubMed ID
DOI
ISSN
0021-8979
EISSN