Low-temperature heat capacities of silicon carbide
Lin, G. J. Ho, J. C. Dandekar, D. P.
Lin, G. J.
Ho, J. C.
Dandekar, D. P.
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1987-01-01
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Lin, G. J.; Ho, J. C.; Dandekar, D. P.; , "Low-temperature heat capacities of silicon carbide," Journal of Applied Physics , vol.61, no.11, pp.5198, Jun 1987
doi: 10.1063/1.338302
Abstract
Temperature dependence of heat capacity data between 4 and 12 K can be represented by a single term, ßT3, associated with lattice vibrations. The coefficient ß corresponds to a large Debye temperature of 990 K consistent with the high melting point and hardness of this refractory ceramic material.
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IEEE
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Journal of Applied Physics , vol.61, no.11, pp.5198
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0021-8979