Determination of thickness of multiple layer thin films by an x-ray-diffraction technique

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Authors
Chaudhuri, J.
Hashmi, F.
Issue Date
1994-10-01
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Article
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en_US
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Abstract

An x-ray-diffraction method for determining the thickness of multiple layer thin films grown on a single-crystal substrate is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AlGaAs/GaAs, were determined. Good agreement was obtained between the results from x-ray measurement and scanning electron microscopy data, demonstrating the high precision of this technique.

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The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954
Citation
Chaudhuri, J.; Hashmi, F.; , "Determination of thickness of multiple layer thin films by an x-ray-diffraction technique," Journal of Applied Physics , vol.76, no.7, pp.4454-4456, Oct 1994 doi: 10.1063/1.357275
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IEEE
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0021-8979
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