The effect of void on characteristics of LDMOS power amplifier
Son, Mi-Hyun Bae, Sooho Park, Hyuncheol Kwon, Hyuck M.
Son, Mi-Hyun
Bae, Sooho
Park, Hyuncheol
Kwon, Hyuck M.
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2016-03
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Article
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Keywords
Void,LDMOS,Power amplifier,RRH,Linearity
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Citation
Son, M.-H., Bae, S., Park, H. and Kwon, H. M. (2016), The effect of void on characteristics of LDMOS power amplifier. Microw. Opt. Technol. Lett., 58: 691–694. doi: 10.1002/mop.29642
Abstract
The effect of void on characteristics of the laterally diffused metal oxide semiconductor (LDMOS) power amplifier (PA) is analyzed using the thermal and circuit analysis together. Thermal analysis is performed for finding the junction temperature of LDMOS PA as void area changes. Circuit analysis is performed from these results and LDMOS PA libraries. The analysis results show the linearity, gain, and efficiency degradation in the LDMOS PA as a result of the increase in void area. And this simulation methodology can be used for the design of the PA. (c) 2016 Wiley Periodicals, Inc.
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Wiley Periodicals, Inc.
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Microwave and Optical Technology Letters;v.58:no.3
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0895-2477