The effect of void on characteristics of LDMOS power amplifier

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Issue Date
2016-03
Authors
Son, Mi-Hyun
Bae, Sooho
Park, Hyuncheol
Kwon, Hyuck M.
Advisor
Citation

Son, M.-H., Bae, S., Park, H. and Kwon, H. M. (2016), The effect of void on characteristics of LDMOS power amplifier. Microw. Opt. Technol. Lett., 58: 691–694. doi: 10.1002/mop.29642

Abstract

The effect of void on characteristics of the laterally diffused metal oxide semiconductor (LDMOS) power amplifier (PA) is analyzed using the thermal and circuit analysis together. Thermal analysis is performed for finding the junction temperature of LDMOS PA as void area changes. Circuit analysis is performed from these results and LDMOS PA libraries. The analysis results show the linearity, gain, and efficiency degradation in the LDMOS PA as a result of the increase in void area. And this simulation methodology can be used for the design of the PA. (c) 2016 Wiley Periodicals, Inc.

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