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    Low-temperature heat capacities of silicon carbide

    Date
    1987-01-01
    Author
    Lin, G. J.
    Ho, J. C.
    Dandekar, D. P.
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    Citation
    Lin, G. J.; Ho, J. C.; Dandekar, D. P.; , "Low-temperature heat capacities of silicon carbide," Journal of Applied Physics , vol.61, no.11, pp.5198, Jun 1987 doi: 10.1063/1.338302
    Abstract
    Temperature dependence of heat capacity data between 4 and 12 K can be represented by a single term, ßT3, associated with lattice vibrations. The coefficient ß corresponds to a large Debye temperature of 990 K consistent with the high melting point and hardness of this refractory ceramic material.
    Description
    The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954
    URI
    http://dx.doi.org/10.1063/1.338302
    http://hdl.handle.net/10057/4076
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