Low-temperature heat capacities of silicon carbide
Lin, G. J.
Ho, J. C.
Dandekar, D. P.
MetadataShow full item record
Lin, G. J.; Ho, J. C.; Dandekar, D. P.; , "Low-temperature heat capacities of silicon carbide," Journal of Applied Physics , vol.61, no.11, pp.5198, Jun 1987 doi: 10.1063/1.338302
Temperature dependence of heat capacity data between 4 and 12 K can be represented by a single term, ßT3, associated with lattice vibrations. The coefficient ß corresponds to a large Debye temperature of 990 K consistent with the high melting point and hardness of this refractory ceramic material.
The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954