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dc.contributor.advisorIsakov, Victor, 1947-
dc.contributor.authorMyers, Joseph Kenneth
dc.date.accessioned2010-09-23T15:29:00Z
dc.date.available2010-09-23T15:29:00Z
dc.date.issued2010-04-23
dc.identifier.citationMyers, Joseph K. (2010). Inverse doping profile analysis for semiconductor quality control. -- In Proceedings: 6th Annual Symposium: Graduate Research and Scholarly Projects. Wichita, KS: Wichita State University, p. 155-156en
dc.identifier.urihttp://hdl.handle.net/10057/3225
dc.descriptionPaper presented to the 6th Annual Symposium on Graduate Research and Scholarly Projects (GRASP) held at the Hughes Metropolitan Complex, Wichita State University, April 23, 2010.en
dc.descriptionResearch completed at Department of Mathematics and Statistics, College of Liberal Arts and Sciencesen
dc.description.abstractInverse doping profile problems are linked to inverse conductivity problems under the assumptions of zero space charge and low injection. Unipolar inverse conductivity problems are analyzed theoretically via three uniqueness proofs. Optimized numerical methods are developed for solving the unipolar direct conductivity problem with a piecewise constant conductivity coefficient. Finally, the unipolar inverse conductivity problem is solved for inclusions defined by as many as 9 entirely unknown parameters, or by as many as 120 parameters when an initial guess for each parameter is known with less than 10% error. Our free boundary identification algorithm produces a sequence of improved approximations in a way that provides both regularization and accelerated convergence towards the solution.en
dc.format.extent67314 bytes
dc.format.extent1843 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypetext/plain
dc.language.isoen_USen
dc.publisherWichita State University. Graduate Schoolen
dc.relation.ispartofseriesGRASPen
dc.relation.ispartofseriesv.6en
dc.titleInverse doping profile analysis for semiconductor quality controlen
dc.typeConference paperen


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