Quasi-layered crystal structure coupled with point defects leading to ultralow lattice thermal conductivity in n-type

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Issue Date
2021-10-01
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Authors
Ye, Zhengyang
Peng, Wanyue
Wang, Fei
Balodhi, Ashiwini
Basnet, Rabindra
Hu, Jin
Zevalkink, Alex
Wang, Jian
Advisor
Citation

Ye, Z., Peng, W., Wang, F., Balodhi, A., Basnet, R., Hu, J., . . . Wang, J. (2021). Quasi-layered crystal structure coupled with point defects leading to ultralow lattice thermal conductivity in n-type Cu2.83Bi10Se16. ACS Applied Energy Materials, doi:10.1021/acsaem.1c02154

Abstract

a new n-type thermoelectric material, was synthesized via a high-temperature solid-state routine. The quasi-layered structure features of were established by a comprehensive study including variable-temperature single-crystal X-ray diffraction, synchrotron powder X-ray diffraction, DFT calculations, and resonant ultrasound spectroscopy. The structural relationship between and two previously reported compounds, and , is addressed. The quasi-layered structure of coupled with point defects accounts for its ultralow lattice thermal conductivity. First-principles simulations predict that the electrical properties of are sensitive to Cu content, which is confirmed by the thermoelectric property measurements of (x = 0, 0.1, and 0.2) samples. Through tuning the Cu content, shows the best performance due to the highest Seebeck coefficient combined with a moderate electrical conductivity, achieving zT = 0.42 at 775 K. This work proves that crystal structure engineering can achieve extremely low lattice thermal conductivity in crystalline solids.

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