Browsing Mechanical Engineering by Author "Chaudhuri, J."
Now showing items 1-5 of 5
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Analysis of the strain profile in thin Au/Ni multilayers by x-ray diffraction
Chaudhuri, J.; Gondhalekar, V.; Jankowski, A. F. (IEEE, 1992-04-01)The strain relaxation in Au/Ni multilayers was analyzed in detail using a dynamical theory of x-ray diffraction. The depth profile of strain in the modulation direction was determined by an iterative fitting of the calculated ... -
Determination of thickness of multiple layer thin films by an x-ray-diffraction technique
Chaudhuri, J.; Hashmi, F. (IEEE, 1994-10-01)An x-ray-diffraction method for determining the thickness of multiple layer thin films grown on a single-crystal substrate is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic ... -
Thickness measurement of thin films by x-ray absorption
Chaudhuri, J.; Shah, S. (IEEE, 1991-01)An x-ray diffraction method for determining thicknesses of thin films grown on single-crystal substrates is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were ... -
An x-ray diffraction method for measuring thicknesses of epitaxial thin films
Chaudhuri, J.; Shah, S.; Harbison, J. P. (IEEE, 1989-12)An x-ray diffraction technique capable of measuring the thicknesses of epitaxial thin films with high precision is described. The advantages of this method are that it is nondestructive, straightforward, and rapidly ... -
X-ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates
Chaudhuri, J.; Thokala, R.; Edgar, J. H.; Sywe, B. S. (IEEE, 1995-06-01)A detailed double crystal x-ray diffractometry study of epitaxial AlN thin films grown on sapphire, silicon and silicon carbide substrates was carried out to compare the structure, residual stress and defect concentration ...