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dc.contributor.authorSon, Mi-Hyun
dc.contributor.authorBae, Sooho
dc.contributor.authorPark, Hyuncheol
dc.contributor.authorKwon, Hyuck M.
dc.date.accessioned2016-09-25T23:09:26Z
dc.date.available2016-09-25T23:09:26Z
dc.date.issued2016-10
dc.identifier.citationSon, M.-H., Bae, S., Park, H. and Kwon, H. M. (2016), Erratum for: The effect of void on characteristics of LDMOS power amplifier. Microw. Opt. Technol. Lett., 58: 2536en_US
dc.identifier.issn0895-2477
dc.identifier.otherWOS:000380944400060
dc.identifier.urihttp://dx.doi.org/10.1002/mop.30090
dc.identifier.urihttp://hdl.handle.net/10057/12431
dc.descriptionClick on the DOI link to access the article (may not be free).en_US
dc.language.isoen_USen_US
dc.publisherJohn Wiley & Sons, Inc.en_US
dc.relation.ispartofseriesMicrowave and Optical Technology Letters;v.58:no.10
dc.titleErratum for: The effect of void on characteristics of LDMOS power amplifieren_US
dc.typeErratumen_US
dc.rights.holderCopyright © 1999 - 2016 John Wiley & Sons, Inc. All Rights Reserveden_US


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