Low temperature heat capacity of Ti3SiC2
Ho, J. C. Hamdeh, Hussein H. Barsoum, M. W. El-Raghy, T.
Ho, J. C.
Hamdeh, Hussein H.
Barsoum, M. W.
El-Raghy, T.
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1999-06-01
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Article
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Debye temperature,Fermi level,Electronic density of states,Hardness,Localised states,Silicon compounds,Specific heat,Titanium compounds
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Citation
Ho, J. C.; Hamdeh, H. H.; Barsoum, M. W.; El-Raghy, T.; , "Low temperature heat capacity of Ti3SiC2," Journal of Applied Physics , vol.85, no.11, pp.7970-7971, Jun 1999
doi: 10.1063/1.370618
Abstract
Calorimetric measurements between 2 and 10 K have been made on Ti3SiC2. The molar heat capacity, c, data can be fitted to the sum of an electronic and a lattice contribution: c=?T+ßT3. The ß value of 0.049 mJ/mol?K4 yields a Debye temperature of 620 K, typical of high stiffness and hardness ceramic materials such as TiC. This value is significantly higher than the Debye temperature measured from elastic measurements. The ? value of 5.21 mJ/mol?K2 is a measure of the density of states at the Fermi level. This value, when normalized to a per Ti atom basis, is higher than that of TiC0.97, but roughly half that of Ti metal, implying that covalent-type bonding induced electron localization increases in going from Ti to Ti3SiC2 to TiC. It also partially explains the excellent electrical and thermal conductivities of Ti3SiC2. © 1999 American Institute of Physics.
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The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954
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IEEE
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Journal of Applied Physics , vol.85, no.11, pp.7970-7971
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0021-8979