Growth and characterization of low defect GaN by hydride vapor phase epitaxy
Xu, Xueping Vaudo, Robert P. Loria, C. Salant, Allan Brandes, George R. Chaudhuri, J.
Xu, Xueping
Vaudo, Robert P.
Loria, C.
Salant, Allan
Brandes, George R.
Chaudhuri, J.
Citations
Altmetric:
Other Names
Location
Time Period
Advisors
Original Date
Digitization Date
Issue Date
2002-12
Type
Conference paper
Genre
Keywords
A1. Etching,A3. Hydride vapor phase epitaxy,B1. Gallium nitride,B1. Nitrides,B2. Semiconducting gallium compounds,B2. Semiconducting III-V materials
Subjects (LCSH)
Citation
Xueping Xu, R.P Vaudo, C Loria, A Salant, G.R Brandes, J Chaudhuri, Growth and characterization of low defect GaN by hydride vapor phase epitaxy, Journal of Crystal Growth, Volume 246, Issues 3–4, 2002, Pages 223-229, ISSN 0022-0248, https://doi.org/10.1016/S0022-0248(02)01745-1.
Abstract
Low defect density GaN boules were produced using hydride vapor phase epitaxy. A high growth rate of over 100μm/h enabled the growth of GaN boules longer than 3mm in length. GaN wafers generated from the boules were characterized by X-ray diffraction, synchrotron white beam X-ray transmission topography, and microscopy of etched surfaces. It was found that the dislocation density decreased with the thickness of the grown material. GaN samples with dislocation density less than 104cm-2 were produced. The high crystal quality of the GaN samples was further demonstrated with a full-width at half-maximum of 38 arcsec for the GaN(0 0 0 4) double crystal X-ray rocking curve. © 2002 Elsevier Science B.V. All rights reserved.
Table of Contents
Description
Click on the DOI link to access this article at the publiher's website (may not be free).
Publisher
Elsevier
Journal
Journal of Crystal Growth
Book Title
Series
BNS
Digital Collection
Finding Aid URL
Use and Reproduction
Archival Collection
PubMed ID
ISSN
00220248