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Understanding and Tuning Magnetism in Layered Ising-Type Antiferromagnet FePSe$_3$ for Potential 2D Magnet
Basnet, Rabindra ; Patel, Taksh ; Wang, Jian ; Upreti, Dinesh ; Chhetri, Santosh K. ; Acharya, Gokul ; Nabi, Md Rafique Un ; Sakon, Josh ; Hu, Jin
Basnet, Rabindra
Patel, Taksh
Wang, Jian
Upreti, Dinesh
Chhetri, Santosh K.
Acharya, Gokul
Nabi, Md Rafique Un
Sakon, Josh
Hu, Jin
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2024-01
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Article
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Keywords
2D magnet,Ising-type magnetism,Magnetic anisotropy,Spin-flop transition
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Citation
Basnet, R., Patel, T., Wang, J., Upreti, D., Chhetri, S.K., Acharya, G., Nabi, M.R.U., Sakon, J., & Hu, J. (2024). Understanding and Tuning Magnetism in Layered Ising-Type Antiferromagnet FePSe$_3$ for Potential 2D Magnet. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202300738
Abstract
Recent developments in 2D magnetic materials have motivated the search for new van der Waals magnetic materials, especially Ising-type magnets with strong magnetic anisotropy. Fe-based MPX$_3$ ($M$ = transition metal, $X$ = chalcogen) compounds such as FePS$_3$ and FePSe$_3$ both exhibit an Ising-type magnetic order, but FePSe$_3$ receives much less attention compared to FePS$_3$. This work focuses on establishing the strategy to engineer magnetic anisotropy and exchange interactions in this less-explored compound. Through chalcogen and metal substitutions, the magnetic anisotropy is found to be immune against S substitution for Se whereas tunable only with heavy Mn substitution for Fe. In particular, Mn substitution leads to a continuous rotation of magnetic moments from the out-of-plane direction toward the in-plane. Furthermore, the magnetic ordering temperature displays non-monotonic doping dependence for both chalcogen and metal substitutions but due to different mechanisms. These findings provide deeper insight into the Ising-type magnetism in this important van der Waals material, shedding light on the study of other Ising-type magnetic systems as well as discovering novel 2D magnets for potential applications in spintronics.
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This is an open access article under the terms of theCreative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
This is an open access article under the terms of theCreative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Publisher
John Wiley and Sons Inc
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Advanced Electronic Materials
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ISSN
2199-160X
