Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy
Zhuang, Dejin Edgar, J. H. Strojek, Beata Chaudhuri, J. Rek, Zophia
Zhuang, Dejin
Edgar, J. H.
Strojek, Beata
Chaudhuri, J.
Rek, Zophia
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2004-02-15
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A1. Defect,A1. Etching,A1. X-ray topography,A2. Growth from vapor,B1. Nitrides
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D. Zhuang, J.H. Edgar, B. Strojek, J. Chaudhuri, Z. Rek, Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy, Journal of Crystal Growth, Volume 262, Issues 1–4, 2004, Pages 89-94, ISSN 0022-0248, https://doi.org/10.1016/j.jcrysgro.2003.10.051.
Abstract
The effectiveness and reliability of estimating the dislocation density in GaN thin films and bulk crystals by defect selective etching in eutectic KOH/NaOH have already been successfully demonstrated. In this communication, we report the results of applying this technique to bulk AlN crystals. Etching produced hexagonal pits on the Al-polar (0001) plane, while hexagonal hillocks formed on the nitrogen face. According to synchrotron white beam X-ray topography (SWBXT) calibration, we believed that the etching pits at Al polarity form primarily at dislocations. The optimized etching temperature for Al-polarity is in the range of 350-380°C, which is typically 50-100°C higher than that for nitrogen polarity, indicating higher stability of Al-polarity. For Al-polarity AlN single crystals grown on Si-face 6H-SiC (0001) substrates, the dislocation density is about 107cm-2 and for self-seeded crystals, the dislocation densities for Al-polarity and the hillock densities for N-polarity are both on the order of 103cm -2. As far as the dislocation density is concerned, self-seeded crystals have a better quality than crystals grown on Si-face 6H-SiC (0001) substrates. © 2003 Elsevier B.V. All rights reserved.
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Elsevier
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Journal of Crystal Growth
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00220248