DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0 0 0 1)
Xie, Z. Y. Edgar, J. H. Burkland, B. K. George, J. T. Chaudhuri, J.
Xie, Z. Y.
Edgar, J. H.
Burkland, B. K.
George, J. T.
Chaudhuri, J.
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2001-04
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A1. Etching,A1. Substrates,A3. Epitaxy
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Z.Y. Xie, J.H. Edgar, B.K. Burkland, J.T. George, J. Chaudhuri, DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0001), Journal of Crystal Growth, Volume 224, Issues 3–4, 2001, Pages 235-243, ISSN 0022-0248, https://doi.org/10.1016/S0022-0248(01)01024-7.
Abstract
The effects of etching on-axis 6H-SiC(0 0 0 1) substrates in H2 and HCl/H2 on the surface defects and the polytype of subsequently deposited SiC films are reported. The surface step periodicity and height varied with etching conditions and whether a SiC coating was present or absent on the susceptor. The 3C-SiC films grown on etched substrates had higher crystal quality and lower double positioning boundary (DPB) densities compared to the 3C-SiC films grown on the as-received substrates. DPB-free growth of 3C-SiC was achieved via step flow growth on etched substrates with well-defined three-bilayer step heights at high temperatures (1475°C) and low silane concentrations (<50 ppm SiH4/H2). A mechanism is proposed to explain the DPBs-free growth of the 3C-SiC films based on the metastable step flow growth and the control of the number and the sites where 3C-SiC nucleates. © 2001 Elsevier Science B.V.
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Elsevier
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Journal of Crystal Growth
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00220248