Bulk AlN crystal growth by direct heating of the source using microwaves
Zhuang, Dejin Edgar, J. H. Liu, Bei Huey, Hugo E. Jiang, Hongxing X. Lin, Jingyu Y. Kuball, Martin Mogal, F. Chaudhuri, J. Rek, Zophia
Zhuang, Dejin
Edgar, J. H.
Liu, Bei
Huey, Hugo E.
Jiang, Hongxing X.
Lin, Jingyu Y.
Kuball, Martin
Mogal, F.
Chaudhuri, J.
Rek, Zophia
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2004-02-15
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A1. Characterization,A1. Etching,A1. X-ray topography,A2. Single crystal growth,B1. Nitrides
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D. Zhuang, J.H. Edgar, B. Liu, H.E. Huey, H.X. Jiang, J.Y. Lin, M. Kuball, F. Mogal, J. Chaudhuri, Z. Rek, Bulk AlN crystal growth by direct heating of the source using microwaves, Journal of Crystal Growth, Volume 262, Issues 1–4, 2004, Pages 168-174, ISSN 0022-0248, https://doi.org/10.1016/j.jcrysgro.2003.10.080.
Abstract
AlN single crystal platelets up to 2 × 3 mm2 and needles 1mm in diameter and 3mm in length were successfully grown by directly heating the source materials with microwaves. The process temperature was over 2000°C and the pressure was kept constant at 910 Torr. The growth rate was typically 300 μm h-1 in the c-direction. An emission around 5.5 eV was observed in the photoluminescence spectrum probably caused by magnesium impurity. The dislocation density was low, 6 × 103 cm -2, as determined by both synchrotron white beam X-ray topography and etching in molten potassium hydroxide-sodium hydroxide eutectic alloy. Etching produced hexagonal pits and hexagonal hillocks on the Al- and N-polar surfaces, respectively. Raman spectra, X-ray topograph, and etch pit densities demonstrate that the crystals have good structural quality. © 2003 Elsevier B.V. All rights reserved.
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Elsevier
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Journal of Crystal Growth
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00220248