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Crystal growth of B12As2 on SiC substrate by CVD method

Nagarajan, Rajamani
; 
Xu, Zhou
; 
Edgar, J. H.
; 
Baig, F.
; 
Chaudhuri, J.
; 
Rek, Zophia
; 
Payzant, E. Andrew
; 
Meyer, Harry M.
; 
Pomeroy, James
; 
Kuball, Martin
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Authors
Nagarajan, Rajamani
Xu, Zhou
Edgar, J. H.
Baig, F.
Chaudhuri, J.
Rek, Zophia
Payzant, E. Andrew
Meyer, Harry M.
Pomeroy, James
Kuball, Martin
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Issue Date
2005-01
Type
Article
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Keywords
A1. Characterization,A2. Crystal growth,A3. Chemical vapor deposition processes
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Citation
R. Nagarajan, Z. Xu, J.H. Edgar, F. Baig, J. Chaudhuri, Z. Rek, E.A. Payzant, H.M. Meyer, J. Pomeroy, M. Kuball, Crystal growth of B12As2 on SiC substrate by CVD method, Journal of Crystal Growth, Volume 273, Issues 3–4, 2005, Pages 431-438, ISSN 0022-0248, https://doi.org/10.1016/j.jcrysgro.2004.07.068.
Abstract
The growth of B12As2 by chemical vapor deposition on 6H-SiC substrates using hydrides B2H6 and AsH3 as the reactants is described. The growth rate increased from 1.5 μm/h at 1100°C to a maximum of 5 μm/h at 1400°C, and decreased at higher temperatures. X-ray diffraction indicates that the deposits were amorphous when the deposition temperature was below 1150°C. Strongly c-axis oriented crystalline B12As2 films were obtained at temperatures higher than 1150°C. The orientation relationship of the B 12As2 on 6H-SiC was (0 0 0 1)〈1 0 1̄ 0〉(0 0 0 1)〈1 1 2̄ 0〉. The surface morphology of the B 12As2 film grown at 1150°C consisted of isolated triangular crystallites. A continuous film forms as the growth temperature is progressively increased up to 1450°C. © 2004 Elsevier B.V. All rights reserved.
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Publisher
Elsevier
Journal
Journal of Crystal Growth
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Digital Collection
URI
https://hdl.handle.net/10057/31606
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PubMed ID
DOI
10.1016/j.jcrysgro.2004.07.068
ISSN
00220248
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ME Research Publications
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