Honors Research Articles and Conference Papers

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Honors students produce high-quality research, and they are mentored and encouraged from the beginning of their projects to the end. Click on one of the indexes above to browse by date, author, title, subject, or type the articles which students have published in research journals.


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Now showing 1 - 5 of 19
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    Unprecedented mid-infrared nonlinear optical materials achieved by crystal structure engineering, a case study of (KX)P2S6 (X = Sb, Bi, Ba)
    (Royal Society of Chemistry, 2022-02-02) Nguyen, Vivian; Ji, Bingheng; Wu, Kui; Zhang, Bingbing; Wang, Jian
    Three acentric type-I phase-matchable infrared nonlinear optical materials KSbP2S6, KBiP2S6, and K2BaP2S6, showing excellent balance between the second harmonic generation coefficient, bandgap, and laser damage threshold, were synthesized via a high-temperature solid-state method. KSbP2S6 is isostructural to KBiP2S6, which both crystallize in the β-KSbP2Se6 structure type. K2BaP2S6 was discovered for the first time, which crystallizes in a new structure type. KSbP2S6 and KBiP2S6 exhibit close structural similarity to the parent compound, centrosymmetric Ba2P2S6. The [P2S6] motifs, isotypic to ethane, exist in Ba2P2S6, KSbP2S6, KBiP2S6, and K2BaP2S6. The mixed cations, K/Sb pair, K/Bi pair, and K/Ba pair, play a dual-role of aligning the [P2S6] structure motifs, contributing to a high SHG coefficient, as well as enlarging the bandgap. KSbP2S6, KBiP2S6, and K2BaP2S6 are direct bandgap semiconductors with a bandgap of 2.9(1) eV, 2.3(1) eV and 4.1(1) eV, respectively. KSbP2S6, KBiP2S6, and K2BaP2S6 exhibit a high second harmonic response of 2.2× AgGaS2, 1.8× AgGaS2, and 2.1× AgGaS2, respectively, coupled with a high laser damage threshold of 3× AgGaS2, 3× AgGaS2, and 8× AgGaS2, respectively. The DFT calculations also confirm that the large SHG coefficient mainly originates from [P2S6] anionic motifs.
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    Synthesis, crystal growth, electronic properties and optical properties of Y6IV2.5S14 (IV=Si, Ge)
    (Wiley, 2021-12-06) Ye, Zhengyang; Bardelli, Stefano; Wu, Kui; Sarkar, Arka; Swindle, Andrew; Wang, Jian
    Two isostructural ternary acentric sulfides, Y6Si2.5S14 (1) and Y6Ge2.5S14 (2) were re-investigated to understand the origin of the chemical flexibility of RE6BxCyCh14(RE=Y, La−Lu; B=Si, Ge, Sn, Al, Ga; C=monovalent M+ (Ag, Na, Li, etc.), divalent M2+ (Mg, Cr, Ni, Zn, etc.), trivalent M3+ (Al, In, Ga, etc.), tetravalent M4+ (Si, Ge, Sn) and pentavalent M5+ (Sb), Ch=S, Se), which consists of ∼444 isostructural compounds. Y6IV2.5S14 (IV=Si, Ge) were synthesized by a high-temperature salt flux method. The crystal structures of Y6IV2.5S14 (IV=Si, Ge) are constructed by [YS8] polyhedra, [Si1S6] octahedra, and [Si2S4] tetrahedra. The Si1 atom displaces from the center of [Si1S6] octahedra with partial occupancy, which can be replaced by various metals, and mainly accounts for the chemical flexibility of the RE6BxCyCh14 family. The bonding pictures of Y6Si2.5S14 were studied by electron localization function (ELF) and crystal orbital Hamilton population (COHP) calculations. Y6Si2.5S14 is evaluated as an indirect semiconductor with a bandgap of 2.4(1) eV measured by UV-Vis. The indirect bandgap of Y6Ge2.5S14 is 1.7(1) eV. Y6IV2.5S14 (IV=Si, Ge) are not type-I phase-matchable materials. For samples of 47 μm particle size, Y6Si2.5S14 and Y6Ge2.5S14 own good second harmonic generation (SHG) responses of ∼3.0×AGS and ∼2.8×AGS respectively. Y6Si2.5S14 and Y6Ge2.5S14 possess high laser damage threshold (LDT) of ∼5.5×AGS and ∼5.2×AGS respectively.
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    Synthesis, crystal and electronic structures, and nonlinear optical properties of Y4Si3S12
    (Wiley, 2022-03-21) Bardelli, Stefano; Ye, Zhengyang; Wang, Fei; Zhang, Bingbing; Wang, Jian
    A new acentric sulfide Y4Si3S12 was grown by a high temperature vapor transport reaction. The crystal structure of Y4Si3S12 was determined by single crystal X-ray diffraction. Y4Si3S12 is isostructural to La4Ge3S12. The three dimensional structure of Y4Si3S12 is constructed by [Y1S7] augmented triangular prisms, [Y2S6] triangular prisms and [SiS4] tetrahedra through sharing vertices and edges. Y4Si3S12 is revealed as an indirect bandgap semiconductor with a calculated bandgap of 2.1 eV, which is close to 2.5(1) eV experimentally measured by UV-Vis. The Y−S interactions and Si−S interactions are predicated to be strong ionic bonds and covalent bonds, respectively, by electron localization function coupled with crystal orbital Hamilton population calculations. Y4Si3S12 is verified by DFT calculations to have moderate birefringence, with incident 1900 nm laser, Δn=0.09. DFT calculations also predicted that Y4Si3S12 possesses moderate second harmonic generation response with χ111=15.03 pm/V. The nonlinear optical properties of Y4Si3S12 are mainly contributed by Y−S interactions revealed by DFT calculations.
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    Comparative analysis of college athletics programs’ websites: Name-Image-Likeness content
    (Wichita State University, 2024-05-10) Racy, Tyler
    This study is about potential variances in the presentation of NIL information on college athletic program websites across different divisions and conferences. This paper will examine the websites of member institutions from these NCAA conferences: Big 10, AAC, & MIAA.
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    Synthesis, crystal and electronic structures, linear and nonlinear optical properties, and photocurrent response of oxyhalides CeHaVIO$_4$ (Ha = Cl, Br; VI = Mo, W)
    (Royal Society of Chemistry, 2023-12) Jiao, Zixian; Quah, Jasmine; Syed, Tajamul Hussain; Wei, Wei; Zhang, Bingbing; Wang, Fei; Wang, Jian
    Four heteroanionic oxyhalides, CeClMoO$_4$, CeBrMoO$_4$, CeClWO$_4$, and CeBrWO$_4$, have been studied as multifunctional materials, which show a combination of good second harmonic generation (SHG) response and photocurrent signals. Millimeter-sized CeHaVIO$_4$ (Ha = Cl, Br; VI = Mo, W) crystals were grown by halide salt flux. The crystal structure of CeHaVIO$_4$ crystals was accurately determined by single-crystal X-ray diffraction. CeClMoO$_4$, CeBrMoO$_4$, and CeBrWO$_4$ are isostructural to each other, and crystallize in the acentric LaBrMoO4 structure type. CeClWO$_4$ crystallizes in a new structure type with unit cell parameters of $a$ = 19.6059(2) Å, $b$ = 5.89450(10) Å, $c$ = 7.80090(10) Å, and β = 101.4746(8)°. The bandgaps of CeHaVIO$_4$ fall into the range of 2.8(1)-3.1(1) eV, which are much smaller than those of isotypic LaHaVIO$_4$ (Ha = Cl, Br; VI = Mo, W) in the range of 3.9(1)-4.3(1) eV. The narrowing of bandgaps in CeHaVIO$_4$ originates from the presence of partially filled 4f orbitals of cerium atoms, which was confirmed by density functional theory (DFT) calculations. The moderate bandgaps make CeHaVIO$_4$ suitable for infrared nonlinear optical (IR NLO) applications. CeBrMoO$_4$ and CeBrWO$_4$ exhibit moderate SHG responses of 0.58x AGS and 0.46x AGS, respectively, and are both type-I phase-matching materials. Moderate SHG response, easy growth of crystals, high ambient stability, and type-I phase-matching behavior make CeBrMoO$_4$ and CeBrWO$_4$ great materials for IR NLO applications. CeHaVIO$_4$ films also exhibited good photocurrent response upon light radiation. This work demonstrates the rich structural chemistry of the REHaVIO$_4$ (RE = Y, La-Lu; Ha = Cl, Br; VI = Mo, W) family and the potential presence of more multifunctional materials.