| dc.contributor.author |
Lin, G. J. |
en_US |
| dc.contributor.author |
Ho, J. C. |
en_US |
| dc.contributor.author |
Dandekar, D. P. |
en_US |
| dc.date.accessioned |
2011-12-20T23:52:18Z |
|
| dc.date.available |
2011-12-20T23:52:18Z |
|
| dc.date.issued |
1987-01-01 |
en_US |
| dc.identifier.citation |
Lin, G. J.; Ho, J. C.; Dandekar, D. P.; , "Low-temperature heat capacities of silicon carbide," Journal of Applied Physics , vol.61, no.11, pp.5198, Jun 1987
doi: 10.1063/1.338302 |
en_US |
| dc.identifier.issn |
0021-8979 |
en_US |
| dc.identifier.uri |
http://dx.doi.org/10.1063/1.338302 |
en_US |
| dc.identifier.uri |
http://hdl.handle.net/10057/4076 |
|
| dc.description |
The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954 |
en_US |
| dc.description.abstract |
Temperature dependence of heat capacity data between 4 and 12 K can be represented by a single term, ßT3, associated with lattice vibrations. The coefficient ß corresponds to a large Debye temperature of 990 K consistent with the high melting point and hardness of this refractory ceramic material. |
en_US |
| dc.language.iso |
en_US |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.relation.ispartofseries |
Journal of Applied Physics , vol.61, no.11, pp.5198 |
en_US |
| dc.title |
Low-temperature heat capacities of silicon carbide |
en_US |
| dc.type |
Article |
en_US |
| dc.description.version |
Peer reviewed article |
en_US |
| dc.rights.holder |
© IEEE,1987 |
en_US |