| dc.contributor.author | Ho, J. C. | en_US |
| dc.contributor.author | Hamdeh, Hussein H. | en_US |
| dc.contributor.author | Barsoum, M. W. | en_US |
| dc.contributor.author | El-Raghy, T. | en_US |
| dc.date.accessioned | 2011-12-20T23:52:17Z | |
| dc.date.available | 2011-12-20T23:52:17Z | |
| dc.date.issued | 1999-10-01 | en_US |
| dc.identifier.citation | Ho, J.C.; Hamdeh, H.H.; Barsoum, M.W.; El-Raghy, T.; , "Low temperature heat capacities of Ti3Al1.1C1.8, Ti4AlN3, and Ti3SiC2," Journal of Applied Physics , vol.86, no.7, pp.3609-3611, Oct 1999.doi: 10.1063/1.371267 | en_US |
| dc.identifier.issn | 0021-8979 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.371267 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10057/4075 | |
| dc.description | The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045955 | en_US |
| dc.description.abstract | For the binary Ti Al system, an ordering transformation in Ti3Al has been shown to result in a significant lowering of the electronic heat-capacity coefficient, ?, by removing electrons from conducting states. When ? is normalized to a per Ti atom basis, the same tendency is found in low temperature calorimetric studies of the conducting ternary carbides Ti3Al1.1C1.8, Ti4AlN3, and Ti3SiC2 reported herein. As a consequence of C- or N-induced covalent-like bond formation, the Debye temperatures in these ternaries are in excess of 700 K. © 1999 American Institute of Physics. | en_US |
| dc.language.iso | en_US | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.ispartofseries | Journal of Applied Physics , vol.86, no.7, pp.3609-3611. | en_US |
| dc.subject | Debye temperature | en_US |
| dc.subject | Aluminium alloys | en_US |
| dc.subject | Specific heat | en_US |
| dc.subject | Titanium alloys | en_US |
| dc.title | Low temperature heat capacities of Ti3Al1.1C1.8, Ti4AlN3, and Ti3SiC2 | en_US |
| dc.type | Article | en_US |
| dc.description.version | Peer reviewed article | en_US |
| dc.rights.holder | © IEEE, 1999 | en_US |