An x-ray diffraction method for measuring thicknesses of epitaxial thin films

dc.contributor.author	Chaudhuri, J.	en_US
dc.contributor.author	Shah, S.	en_US
dc.contributor.author	Harbison, J. P.	en_US
dc.date.accessioned	2011-12-20T23:37:44Z
dc.date.available	2011-12-20T23:37:44Z
dc.date.issued	1989-12	en_US
dc.identifier.citation	Chaudhuri, J.; Shah, S.; Harbison, J. P.; , "An x-ray diffraction method for measuring thicknesses of epitaxial thin films," Journal of Applied Physics , vol.66, no.11, pp.5373-5375, Dec 1989 doi: 10.1063/1.343732	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.343732	en_US
dc.identifier.uri	http://hdl.handle.net/10057/4064
dc.description	The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954	en_US
dc.description.abstract	An x-ray diffraction technique capable of measuring the thicknesses of epitaxial thin films with high precision is described. The advantages of this method are that it is nondestructive, straightforward, and rapidly performed. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. As an example of the application of this method, thicknesses of AlxGa1-xAs thin films on GaAs were determined. The integrated reflected intensities from the film and the substrate were obtained using an x-ray double-crystal diffractometer. Excellent agreement between the results from x-ray measurements and reflection high-energy electron diffraction oscillation data was obtained.	en_US
dc.language.iso	en_US	en_US
dc.publisher	IEEE	en_US
dc.relation.ispartofseries	Journal of Applied Physics , vol.66, no.11, pp.5373-5375	en_US
dc.title	An x-ray diffraction method for measuring thicknesses of epitaxial thin films	en_US
dc.type	Article	en_US
dc.description.version	Peer reviewed article	en_US
dc.rights.holder	© IEEE,1989	en_US