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dc.contributor.authorChaudhuri, J.en_US
dc.contributor.authorHashmi, F.en_US
dc.date.accessioned2011-12-20T23:37:43Z
dc.date.available2011-12-20T23:37:43Z
dc.date.issued1994-10-01en_US
dc.identifier.citationChaudhuri, J.; Hashmi, F.; , "Determination of thickness of multiple layer thin films by an x-ray-diffraction technique," Journal of Applied Physics , vol.76, no.7, pp.4454-4456, Oct 1994 doi: 10.1063/1.357275en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.357275en_US
dc.identifier.urihttp://hdl.handle.net/10057/4062
dc.descriptionThe full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954en_US
dc.description.abstractAn x-ray-diffraction method for determining the thickness of multiple layer thin films grown on a single-crystal substrate is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AlGaAs/GaAs, were determined. Good agreement was obtained between the results from x-ray measurement and scanning electron microscopy data, demonstrating the high precision of this technique.en_US
dc.language.isoen_USen_US
dc.publisherIEEEen_US
dc.relation.ispartofseriesJournal of Applied Physics , vol.76, no.7, pp.4454-4456en_US
dc.titleDetermination of thickness of multiple layer thin films by an x-ray-diffraction techniqueen_US
dc.typeArticleen_US
dc.description.versionPeer reviewed articleen_US
dc.rights.holder© IEEE, 1994en_US


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