| dc.contributor.author |
Chaudhuri, J. |
en_US |
| dc.contributor.author |
Hashmi, F. |
en_US |
| dc.date.accessioned |
2011-12-20T23:37:43Z |
|
| dc.date.available |
2011-12-20T23:37:43Z |
|
| dc.date.issued |
1994-10-01 |
en_US |
| dc.identifier.citation |
Chaudhuri, J.; Hashmi, F.; , "Determination of thickness of multiple layer thin films by an x-ray-diffraction technique," Journal of Applied Physics , vol.76, no.7, pp.4454-4456, Oct 1994
doi: 10.1063/1.357275 |
en_US |
| dc.identifier.issn |
0021-8979 |
en_US |
| dc.identifier.uri |
http://dx.doi.org/10.1063/1.357275 |
en_US |
| dc.identifier.uri |
http://hdl.handle.net/10057/4062 |
|
| dc.description |
The full text of this article is not available on SOAR. WSU users can access the article via IEEE Xplore database licensed by University Libraries: http://libcat.wichita.edu/vwebv/holdingsInfo?bibId=1045954 |
en_US |
| dc.description.abstract |
An x-ray-diffraction method for determining the thickness of multiple layer thin films grown on a single-crystal substrate is presented. The equations, based on the kinematical theory of x-ray diffraction and the mosaic crystal model, were developed. As an example of the application of the method, thicknesses of a double heterostructure system, namely AlAs/AlGaAs/GaAs, were determined. Good agreement was obtained between the results from x-ray measurement and scanning electron microscopy data, demonstrating the high precision of this technique. |
en_US |
| dc.language.iso |
en_US |
en_US |
| dc.publisher |
IEEE |
en_US |
| dc.relation.ispartofseries |
Journal of Applied Physics , vol.76, no.7, pp.4454-4456 |
en_US |
| dc.title |
Determination of thickness of multiple layer thin films by an x-ray-diffraction technique |
en_US |
| dc.type |
Article |
en_US |
| dc.description.version |
Peer reviewed article |
en_US |
| dc.rights.holder |
© IEEE, 1994 |
en_US |